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Transistors / Power Field-Effect Transistors / IRL1004PBF
Datasheets
IRL1004PBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 130A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL1004PBF by International Rectifier

Results Overview of IRL1004PBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRL1004PBF Information

IRL1004PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRL1004PBF

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 44
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRL1004PBF

IRL1004PBF CAD Models

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IRL1004PBF Part Data Attributes

Parametric Data
IRL1004PBF International Rectifier
Buy Now Datasheet
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IRL1004PBF International Rectifier Power Field-Effect Transistor, 130A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 700 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 200 W
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL1004PBF

This table gives cross-reference parts and alternative options found for IRL1004PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL1004PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL1004 International Rectifier Check for Price Power Field-Effect Transistor, 130A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRL1004PBF vs IRL1004

IRL1004PBF Related Parts

IRL1004PBF Frequently Asked Questions (FAQ)

  • The thermal resistance of the IRL1004PBF in a typical PCB layout is around 30-40°C/W, depending on the specific layout and copper thickness. This is not explicitly stated in the datasheet, but can be estimated based on the package dimensions and thermal characteristics.

  • While the IRL1004PBF is a power MOSFET, it is not optimized for high-frequency switching applications. The datasheet does not provide information on high-frequency performance, and the device may not be suitable for frequencies above 100 kHz. For high-frequency applications, a different device may be more suitable.

  • To ensure optimal performance, the IRL1004PBF should be biased with a gate-source voltage (Vgs) of around 10-15V, and a drain-source voltage (Vds) within the recommended operating range. The datasheet provides some guidance on biasing, but additional application notes or simulation tools may be necessary to optimize performance for a specific application.

  • The datasheet does not provide a specific maximum allowed current ripple for the IRL1004PBF. However, as a general rule, the current ripple should be limited to 10-20% of the maximum rated current to ensure reliable operation and prevent overheating.

  • Yes, the IRL1004PBF can be used in a parallel configuration to increase current handling. However, careful attention must be paid to ensuring that the devices are properly matched and that the layout is designed to minimize current imbalance and thermal gradients.