IRHYS597034CM
Description: Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

Overview of IRHYS597034CM by Infineon Technologies AG

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IRHYS597034CM by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRHYS597034CM
Avnet Americas Trans MOSFET P 60V 20A 3-Pin TO-257AA - Bulk (Alt: IRHYS597034CM) RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
RFQ

CAD Models for IRHYS597034CM by Infineon Technologies AG
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Part Data Attributes for IRHYS597034CM by Infineon Technologies AG

IRHYS597034CM
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
134 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.087 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
62 pF
JEDEC-95 Code
TO-257AA
JESD-30 Code
R-XSFM-P3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
80 A
Qualification Status
Not Qualified
Reference Standard
MIL-STD-750; RH - 100K Rad(Si)
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
125 ns
Turn-on Time-Max (ton)
90 ns
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  1. IRHYS597034CM
    Infineon Technologies AG
    Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3
    VS

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