Part Details for IRHY9130CM by International Rectifier
Overview of IRHY9130CM by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for IRHY9130CM
IRHY9130CM CAD Models
IRHY9130CM Part Data Attributes:
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IRHY9130CM
International Rectifier
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Datasheet
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IRHY9130CM
International Rectifier
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Package Description | FLANGE MOUNT, R-MSFM-P3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | R-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRHY9130CM
This table gives cross-reference parts and alternative options found for IRHY9130CM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHY9130CM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHY9130CMSCSPBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | IRHY9130CM vs IRHY9130CMSCSPBF |
| IRHY9130CM | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Infineon Technologies AG | IRHY9130CM vs IRHY9130CM |
| IRHY93130CM | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Infineon Technologies AG | IRHY9130CM vs IRHY93130CM |
| IRHY9130CMPBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | IRHY9130CM vs IRHY9130CMPBF |
| JANSF2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | IRHY9130CM vs JANSF2N7382 |
| JANSR2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Microsemi Corporation | IRHY9130CM vs JANSR2N7382 |
| JANSR2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | IRHY9130CM vs JANSR2N7382 |
| IRHY9130CMSCS | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | International Rectifier | IRHY9130CM vs IRHY9130CMSCS |
| JANSF2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Infineon Technologies AG | IRHY9130CM vs JANSF2N7382 |
| JANTXVF2N7382 | Power Field-Effect Transistor, 11A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Microsemi Corporation | IRHY9130CM vs JANTXVF2N7382 |