Part Details for IRHMS68260 by International Rectifier
Overview of IRHMS68260 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRHMS68260
IRHMS68260 CAD Models
IRHMS68260 Part Data Attributes
|
IRHMS68260
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRHMS68260
International Rectifier
Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-254AA | |
Package Description | FLANGE MOUNT, S-XSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 344 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 45 A | |
Drain-source On Resistance-Max | 0.029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-XSFM-P3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRHMS68260
This table gives cross-reference parts and alternative options found for IRHMS68260. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHMS68260, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHMS67260PBF | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | Infineon Technologies AG | IRHMS68260 vs IRHMS67260PBF |
JANTXVF2N7584T1 | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHMS68260 vs JANTXVF2N7584T1 |
JANTXVR2N7584T1 | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHMS68260 vs JANTXVR2N7584T1 |
IRHMS6S3260 | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHMS68260 vs IRHMS6S3260 |
IRHMS6S7260 | Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHMS68260 vs IRHMS6S7260 |