There are no models available for this part yet.
Overview of IRHM2C50SE by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 2 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRHM2C50SE by International Rectifier
Part Data Attributes for IRHM2C50SE by International Rectifier
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|
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|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
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Package Description
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FLANGE MOUNT, S-MSFM-P3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
|
10 A
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Drain-source On Resistance-Max
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0.6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-254AA
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JESD-30 Code
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S-MSFM-P3
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JESD-609 Code
|
e0
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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150 W
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Power Dissipation-Max (Abs)
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150 W
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
|
TIN LEAD
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Terminal Form
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PIN/PEG
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Terminal Position
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SINGLE
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Transistor Element Material
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SILICON
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Alternate Parts for IRHM2C50SE
This table gives cross-reference parts and alternative options found for IRHM2C50SE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM2C50SE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHM7C50SEPBF | Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM2C50SE vs IRHM7C50SEPBF |
| IRHM7C50SEPBF | Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHM2C50SE vs IRHM7C50SEPBF |