Datasheets
IRHG593110 by:

Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

Part Details for IRHG593110 by International Rectifier

Overview of IRHG593110 by International Rectifier

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Part Details for IRHG593110

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IRHG593110 Part Data Attributes:

IRHG593110 International Rectifier
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IRHG593110 International Rectifier Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description IN-LINE, R-CDIP-T14
Pin Count 36
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.96 A
Drain-source On Resistance-Max 0.98 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-036AB
JESD-30 Code R-CDIP-T14
JESD-609 Code e0
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRHG593110

This table gives cross-reference parts and alternative options found for IRHG593110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHG593110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHG593110 Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14 Infineon Technologies AG IRHG593110 vs IRHG593110
Part Number Description Manufacturer Compare
IRHG593110 Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14 Infineon Technologies AG IRHG593110 vs IRHG593110

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