Datasheets
IRH9250 by:

Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3

Part Details for IRH9250 by International Rectifier

Overview of IRH9250 by International Rectifier

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Part Details for IRH9250

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IRH9250 Part Data Attributes:

IRH9250 International Rectifier
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IRH9250 International Rectifier Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3
Pbfree Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code BFM
Package Description FLANGE MOUNT, O-CBFM-P2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.33 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-CBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRH9250

This table gives cross-reference parts and alternative options found for IRH9250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRH9250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRH9250 Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG IRH9250 vs IRH9250
IRH9250PBF Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier IRH9250 vs IRH9250PBF
Part Number Description Manufacturer Compare
IRH9250PBF Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier IRH9250 vs IRH9250PBF
IRH9250 Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG IRH9250 vs IRH9250

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