Part Details for IRGSL10B60KDPBF by International Rectifier
Overview of IRGSL10B60KDPBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGSL10B60KDPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 342 |
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RFQ | ||
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Quest Components | 273 |
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$2.1756 / $3.5280 | Buy Now | |
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Rochester Electronics | IRGSL10B6 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 573 |
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$1.4700 / $1.7300 | Buy Now |
Part Details for IRGSL10B60KDPBF
IRGSL10B60KDPBF CAD Models
IRGSL10B60KDPBF Part Data Attributes
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IRGSL10B60KDPBF
International Rectifier
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Datasheet
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IRGSL10B60KDPBF
International Rectifier
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-262 | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 22 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 34 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-262 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 28 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 276 ns | |
Turn-on Time-Nom (ton) | 50 ns |
Alternate Parts for IRGSL10B60KDPBF
This table gives cross-reference parts and alternative options found for IRGSL10B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL10B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGSL10B60KD | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRGSL10B60KDPBF vs IRGSL10B60KD |
IRGSL10B60KDPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRGSL10B60KDPBF vs IRGSL10B60KDPBF |