Datasheets
IRGRDN400K06 by: International Rectifier

Insulated Gate Bipolar Transistor, 520A I(C), 600V V(BR)CES, N-Channel

Part Details for IRGRDN400K06 by International Rectifier

Overview of IRGRDN400K06 by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRGRDN400K06

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IRGRDN400K06 Part Data Attributes

IRGRDN400K06 International Rectifier
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IRGRDN400K06 International Rectifier Insulated Gate Bipolar Transistor, 520A I(C), 600V V(BR)CES, N-Channel
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description POST/STUD MOUNT, R-MUPM-X4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 520 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-MUPM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style POST/STUD MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1984 W
Power Dissipation-Max (Abs) 1980 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 2.7 V

Alternate Parts for IRGRDN400K06

This table gives cross-reference parts and alternative options found for IRGRDN400K06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGRDN400K06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRGRDN600M06 Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGRDN600M06
IRGDDN300K06 Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGDDN300K06
IRGRDN400M06 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGRDN400M06
IRGDDN300M06 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGDDN300M06
IRGRDN300K06 Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGRDN300K06
IRGRDN300M06 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGRDN300M06
IRGDDN600M06 Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN400K06 vs IRGDDN600M06

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