Part Details for IRGPH40K by International Rectifier
Results Overview of IRGPH40K by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRGPH40K Information
IRGPH40K by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRGPH40K
IRGPH40K CAD Models
IRGPH40K Part Data Attributes
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IRGPH40K
International Rectifier
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Datasheet
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IRGPH40K
International Rectifier
Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | ULTRAFAST | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 19 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 490 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 160 W | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.5 V |
Alternate Parts for IRGPH40K
This table gives cross-reference parts and alternative options found for IRGPH40K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGPH40K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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1MB20D-060 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | IRGPH40K vs 1MB20D-060 |
SGP13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | IRGPH40K vs SGP13N60UF |
APT35GN120SG | Microchip Technology Inc | $9.6502 | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | IRGPH40K vs APT35GN120SG |
IRGBC40U | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IRGPH40K vs IRGBC40U |
IRGPC50U | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | IRGPH40K vs IRGPC50U |
HGTP20N60C3R | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | IRGPH40K vs HGTP20N60C3R |
HGTD7N60C3S9A | onsemi | Check for Price | 14A,600V, UFS Series N-Channel IGBTs, DPAK-3 / TO-252-3, 2500-REEL | IRGPH40K vs HGTD7N60C3S9A |
IXGP15N120B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IRGPH40K vs IXGP15N120B |
IRG4BC20W-SPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | IRGPH40K vs IRG4BC20W-SPBF |
SGW13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IRGPH40K vs SGW13N60UF |