Part Details for IRGPC40F by International Rectifier
Results Overview of IRGPC40F by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRGPC40F Information
IRGPC40F by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGPC40F
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 528 |
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RFQ | ||
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRGPC40F
IRGPC40F CAD Models
IRGPC40F Part Data Attributes
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IRGPC40F
International Rectifier
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Datasheet
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IRGPC40F
International Rectifier
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AC | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | FAST | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 49 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 160 W | |
| Power Dissipation-Max (Abs) | 160 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 840 ns | |
| Turn-on Time-Nom (ton) | 65 ns | |
| VCEsat-Max | 2 V |
Alternate Parts for IRGPC40F
This table gives cross-reference parts and alternative options found for IRGPC40F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGPC40F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGT1S3N60B3S | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | IRGPC40F vs HGT1S3N60B3S |
| IRG4BC20FD-STRL | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | IRGPC40F vs IRG4BC20FD-STRL |
| IXGH36N60A3D4 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, | IRGPC40F vs IXGH36N60A3D4 |
| IRG4BC20W-STRLPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | IRGPC40F vs IRG4BC20W-STRLPBF |
| HGTP12N60C3 | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | IRGPC40F vs HGTP12N60C3 |
| 1MB10-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | IRGPC40F vs 1MB10-120 |
| HGTG40N60B3 | onsemi | $10.5556 | 600V, PT IGBT, TO-247-3, 450-TUBE | IRGPC40F vs HGTG40N60B3 |
| SGP5N60RUF | Samsung Semiconductor | Check for Price | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | IRGPC40F vs SGP5N60RUF |
| IRGPS40B120U | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | IRGPC40F vs IRGPS40B120U |
| IRG4IBC20KDPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | IRGPC40F vs IRG4IBC20KDPBF |