Part Details for IRGNIN100M12 by International Rectifier
Overview of IRGNIN100M12 by International Rectifier
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Part Details for IRGNIN100M12
IRGNIN100M12 CAD Models
IRGNIN100M12 Part Data Attributes
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IRGNIN100M12
International Rectifier
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Datasheet
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IRGNIN100M12
International Rectifier
Insulated Gate Bipolar Transistor, 175A I(C), 1200V V(BR)CES, N-Channel
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 175 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN CONFIGURABLE DIODE | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 665 W | |
Power Dissipation-Max (Abs) | 665 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 250 ns | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 200 ns | |
Turn-off Time-Nom (toff) | 125 ns | |
Turn-on Time-Max (ton) | 250 ns | |
Turn-on Time-Nom (ton) | 200 ns | |
VCEsat-Max | 2.7 V |