Part Details for IRGIB6B60KDPBF by International Rectifier
Overview of IRGIB6B60KDPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGIB6B60KDPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 250 |
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RFQ | ||
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Rochester Electronics | IRGIB6B60 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2449 |
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$1.3900 / $1.6400 | Buy Now |
Part Details for IRGIB6B60KDPBF
IRGIB6B60KDPBF CAD Models
IRGIB6B60KDPBF Part Data Attributes
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IRGIB6B60KDPBF
International Rectifier
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Datasheet
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Compare Parts:
IRGIB6B60KDPBF
International Rectifier
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, FULL PACK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 11 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 27 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 32 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 26 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 258 ns | |
Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for IRGIB6B60KDPBF
This table gives cross-reference parts and alternative options found for IRGIB6B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGIB6B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRGIB6B60KD | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | IRGIB6B60KDPBF vs IRGIB6B60KD |