Part Details for IRGIB10B60KD1 by International Rectifier
Overview of IRGIB10B60KD1 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGIB10B60KD1
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | 4600 |
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RFQ |
Part Details for IRGIB10B60KD1
IRGIB10B60KD1 CAD Models
IRGIB10B60KD1 Part Data Attributes
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IRGIB10B60KD1
International Rectifier
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Datasheet
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IRGIB10B60KD1
International Rectifier
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 16 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 87 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 44 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 34 ns | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 288 ns | |
Turn-on Time-Nom (ton) | 46 ns |
Alternate Parts for IRGIB10B60KD1
This table gives cross-reference parts and alternative options found for IRGIB10B60KD1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGIB10B60KD1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRGIB10B60KD1 | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | IRGIB10B60KD1 vs IRGIB10B60KD1 |
IRGIB10B60KD1P | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | IRGIB10B60KD1 vs IRGIB10B60KD1P |
IRGIB10B60KD1P | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | International Rectifier | IRGIB10B60KD1 vs IRGIB10B60KD1P |
IRGIB10B60KD1PPBF | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | International Rectifier | IRGIB10B60KD1 vs IRGIB10B60KD1PPBF |
IRGIB10B60KD1PBF | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 | International Rectifier | IRGIB10B60KD1 vs IRGIB10B60KD1PBF |