Part Details for IRGBF20F by International Rectifier
Results Overview of IRGBF20F by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRGBF20F Information
IRGBF20F by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRGBF20F
IRGBF20F CAD Models
IRGBF20F Part Data Attributes
|
IRGBF20F
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRGBF20F
International Rectifier
Insulated Gate Bipolar Transistor, 9A I(C), 900V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
Select a part to compare: |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | FAST | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 9 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | GENERAL PURPOSE SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 510 ns | |
Turn-on Time-Nom (ton) | 40 ns | |
VCEsat-Max | 4.3 V |