Part Details for IRGB4610DPBF by Infineon Technologies AG
Overview of IRGB4610DPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for IRGB4610DPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRGB4610 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 638 |
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RFQ |
Part Details for IRGB4610DPBF
IRGB4610DPBF CAD Models
IRGB4610DPBF Part Data Attributes
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IRGB4610DPBF
Infineon Technologies AG
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Datasheet
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IRGB4610DPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 16 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 77 W | |
| Surface Mount | NO | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |