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Transistors / IGBTs / IRGB4062DPBF
Datasheets
IRGB4062DPBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRGB4062DPBF by Infineon Technologies AG

Results Overview of IRGB4062DPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

IRGB4062DPBF Information

IRGB4062DPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRGB4062DPBF

Part # Distributor Description Stock Price Buy
DISTI # 25M9864
Newark Igbt, 600V, 48A, 175Deg C, 250W, Continuous Collector Current:48A, Collector Emitter Saturation Vo... ltage:1.65V, Power Dissipation:250W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGB4062DPBF more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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DISTI # SP001544880
EBV Elektronik Trans IGBT Chip NCH 600V 48A 3Pin3Tab TO220AB (Alt: SP001544880) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for IRGB4062DPBF

IRGB4062DPBF CAD Models

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IRGB4062DPBF Part Data Attributes

Parametric Data
IRGB4062DPBF Infineon Technologies AG
Buy Now Datasheet
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IRGB4062DPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 48 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 41 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Rise Time-Max (tr) 31 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 164 ns
Turn-on Time-Nom (ton) 64 ns

Alternate Parts for IRGB4062DPBF

This table gives cross-reference parts and alternative options found for IRGB4062DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGB4062DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRGB4062D Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, IRGB4062DPBF vs IRGB4062D
IRGB4062D International Rectifier Check for Price Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB IRGB4062DPBF vs IRGB4062D

IRGB4062DPBF Related Parts

IRGB4062DPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRGB4062DPBF is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • The recommended gate drive voltage for the IRGB4062DPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRGB4062DPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.

  • The maximum allowable current for the IRGB4062DPBF is 40A, with a maximum pulsed current of 80A.