IRG7S313UTRL
Description: Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3

Overview of IRG7S313UTRL by Infineon Technologies AG

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Part Data Attributes for IRG7S313UTRL by Infineon Technologies AG

IRG7S313UTRL
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
40 A
Collector-Emitter Voltage-Max
330 V
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
276 ns
Turn-on Time-Nom (ton)
25 ns
Want to compare parts?
  1. IRG7S313UTRL
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
    VS

Alternate Parts for IRG7S313UTRL

This table gives cross-reference parts and alternative options found for IRG7S313UTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG7S313UTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG7S313UTRR Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRR
IRG7S313UTRRPBF Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRRPBF
IRG7S313UTRL Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRL
IRG7S313UTRLPBF Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRLPBF
IRG7S313U Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313U
Part Number Description Manufacturer Compare
IRG7S313U Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313U
IRG7S313UTRRPBF Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRRPBF
IRG7S313UTRRPBF Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG7S313UTRL vs IRG7S313UTRRPBF
IRG7S313UTRR Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRR
IRG7S313UTRL Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRG7S313UTRL vs IRG7S313UTRL

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