Datasheets
IRG7PH42UD1MPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
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Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel

Part Details for IRG7PH42UD1MPBF by International Rectifier

Results Overview of IRG7PH42UD1MPBF by International Rectifier

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Applications Industrial Automation Energy and Power Systems Renewable Energy

IRG7PH42UD1MPBF Information

IRG7PH42UD1MPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRG7PH42UD1MPBF

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IRG7PH42UD1MPBF Part Data Attributes

IRG7PH42UD1MPBF International Rectifier
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IRG7PH42UD1MPBF International Rectifier Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 85 A
Collector-Emitter Voltage-Max 1200 V
Fall Time-Max (tf) 43 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 313 W
Surface Mount NO

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