Part Details for IRG4RC10UTRPBF by Infineon Technologies AG
Overview of IRG4RC10UTRPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4RC10UTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | IRG4RC10 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1734 |
|
$0.4014 / $0.4722 | Buy Now |
Part Details for IRG4RC10UTRPBF
IRG4RC10UTRPBF CAD Models
IRG4RC10UTRPBF Part Data Attributes
|
|
IRG4RC10UTRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRG4RC10UTRPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-252AA, DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA FAST | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8.5 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for IRG4RC10UTRPBF
This table gives cross-reference parts and alternative options found for IRG4RC10UTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10UTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4RC10U | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UTRPBF vs IRG4RC10U |
| IRG4RC10UTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UTRPBF vs IRG4RC10UTRPBF |
| IRG4RC10UTR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UTRPBF vs IRG4RC10UTR |
| IRG4RC10UPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UTRPBF vs IRG4RC10UPBF |
| IRG4RC10UTRLPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UTRPBF vs IRG4RC10UTRLPBF |