Part Details for IRG4RC10UDTR by International Rectifier
Overview of IRG4RC10UDTR by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4RC10UDTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | 2000 |
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RFQ |
Part Details for IRG4RC10UDTR
IRG4RC10UDTR CAD Models
IRG4RC10UDTR Part Data Attributes
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IRG4RC10UDTR
International Rectifier
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Datasheet
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IRG4RC10UDTR
International Rectifier
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8.5 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 345 ns | |
| Turn-on Time-Nom (ton) | 56 ns |
Alternate Parts for IRG4RC10UDTR
This table gives cross-reference parts and alternative options found for IRG4RC10UDTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10UDTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4RC10UDTRRP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UDTRRP |
| IRG4RC10UD | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UDTR vs IRG4RC10UD |
| IRG4RC10UD | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UD |
| IRG4RC10UDTRLP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UDTRLP |
| IRG4RC10UDTRR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UDTRR |
| IRG4RC10UDTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UDTRPBF |
| IRG4RC10UDTRL | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UDTR vs IRG4RC10UDTRL |
| IRG4RC10UDTRRP | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRG4RC10UDTR vs IRG4RC10UDTRRP |
| IRG4RC10UDPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRG4RC10UDTR vs IRG4RC10UDPBF |
| IRG4RC10UDTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRG4RC10UDTR vs IRG4RC10UDTRPBF |