Datasheets
IRG4RC10K by:

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

Part Details for IRG4RC10K by International Rectifier

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Part Details for IRG4RC10K

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IRG4RC10K Part Data Attributes

IRG4RC10K International Rectifier
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IRG4RC10K International Rectifier Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRAFAST
Case Connection COLLECTOR
Collector Current-Max (IC) 9 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 290 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 417 ns
Turn-on Time-Nom (ton) 38 ns

Alternate Parts for IRG4RC10K

This table gives cross-reference parts and alternative options found for IRG4RC10K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTRL
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTRRPBF
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTRPBF
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10K vs IRG4RC10KTRPBF
IRG4RC10KTR Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTR
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10K vs IRG4RC10KTRL
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10K vs IRG4RC10KTRRPBF
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTRLPBF
IRG4RC10KPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KPBF
Part Number Description Manufacturer Compare
IRG4RC10KTR Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTR
SGR2N60UF Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRG4RC10K vs SGR2N60UF
SGR6N60UF Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRG4RC10K vs SGR6N60UF
HGTD3N60B3S9A Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation IRG4RC10K vs HGTD3N60B3S9A
SGR2N60UFTM Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRG4RC10K vs SGR2N60UFTM
HGTD3N60C3S Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation IRG4RC10K vs HGTD3N60C3S
STGD3NB60H 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 STMicroelectronics IRG4RC10K vs STGD3NB60H
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10K vs IRG4RC10KTRL
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10K vs IRG4RC10KTRRPBF
SGR2N60UFTF Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRG4RC10K vs SGR2N60UFTF

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