Part Details for IRG4PF50WPBF by International Rectifier
Overview of IRG4PF50WPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRG4PF50WPBF
IRG4PF50WPBF CAD Models
IRG4PF50WPBF Part Data Attributes
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IRG4PF50WPBF
International Rectifier
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Datasheet
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IRG4PF50WPBF
International Rectifier
Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-247AC | |
Package Description | LEAD FREE PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 51 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 220 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 370 ns | |
Turn-on Time-Nom (ton) | 54 ns |
Alternate Parts for IRG4PF50WPBF
This table gives cross-reference parts and alternative options found for IRG4PF50WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PF50WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S12N60B3DS | 27A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | IRG4PF50WPBF vs HGT1S12N60B3DS |
HGTG30N120CN | 30A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | IRG4PF50WPBF vs HGTG30N120CN |
HGTG27N120BN | Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | IRG4PF50WPBF vs HGTG27N120BN |
IRG4IBC30KDPBF | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 | International Rectifier | IRG4PF50WPBF vs IRG4IBC30KDPBF |
SGP04N60 | Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | IRG4PF50WPBF vs SGP04N60 |
SKW30N60FKSA1 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRG4PF50WPBF vs SKW30N60FKSA1 |
IRG4PH30KPBF | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRG4PF50WPBF vs IRG4PH30KPBF |
IRG4PF50WDPBF | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRG4PF50WPBF vs IRG4PF50WDPBF |
IRG4PSC71KPBF | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN | International Rectifier | IRG4PF50WPBF vs IRG4PSC71KPBF |
GT80J101 | TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IRG4PF50WPBF vs GT80J101 |