Datasheets
IRG4PC50WPBF by:
International Rectifier
Honest Han
Infineon Technologies AG
International Rectifier
Not Found

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRG4PC50WPBF by International Rectifier

Results Overview of IRG4PC50WPBF by International Rectifier

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Applications Industrial Automation Electronic Manufacturing

IRG4PC50WPBF Information

IRG4PC50WPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRG4PC50WPBF

Part # Distributor Description Stock Price Buy
ComSIT USA INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Chan... nel, TO-247AC more RoHS: Compliant ECCN: EAR99 Stock DE - 20
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Vyrian Transistors 6
RFQ

Part Details for IRG4PC50WPBF

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IRG4PC50WPBF Part Data Attributes

IRG4PC50WPBF International Rectifier
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IRG4PC50WPBF International Rectifier Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 55 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 86 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 272 ns
Turn-on Time-Nom (ton) 74 ns

Alternate Parts for IRG4PC50WPBF

This table gives cross-reference parts and alternative options found for IRG4PC50WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4PC50W-E International Rectifier Check for Price Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IRG4PC50WPBF vs IRG4PC50W-E
IRG4PC50WPBF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 IRG4PC50WPBF vs IRG4PC50WPBF
SP001537164 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, IRG4PC50WPBF vs SP001537164
IRG4PC50W International Rectifier Check for Price Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN IRG4PC50WPBF vs IRG4PC50W
Part Number Manufacturer Composite Price Description Compare
HGTG40N60A4 Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247. 3 PIN IRG4PC50WPBF vs HGTG40N60A4
IRG4BC20FDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 IRG4PC50WPBF vs IRG4BC20FDPBF
HGT1S12N60C3S9A Intersil Corporation Check for Price 24A, 600V, N-CHANNEL IGBT, TO-263AB IRG4PC50WPBF vs HGT1S12N60C3S9A
FGH50N6S2D Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, IRG4PC50WPBF vs FGH50N6S2D
IRG4BC30UDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRG4PC50WPBF vs IRG4BC30UDPBF
HGT1S7N60A4S Intersil Corporation Check for Price 34A, 600V, N-CHANNEL IGBT, TO-263AB IRG4PC50WPBF vs HGT1S7N60A4S
IRG4PC50UDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 IRG4PC50WPBF vs IRG4PC50UDPBF
MGY25N120D Motorola Mobility LLC Check for Price 38A, 1200V, N-CHANNEL IGBT, TO-264AA, TO-264, 3 PIN IRG4PC50WPBF vs MGY25N120D
MGP11N60E Motorola Mobility LLC Check for Price 15A, 600V, N-CHANNEL IGBT, TO-220AB IRG4PC50WPBF vs MGP11N60E
IRG4PH40UPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN IRG4PC50WPBF vs IRG4PH40UPBF

IRG4PC50WPBF Related Parts

IRG4PC50WPBF Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the IRG4PC50WPBF is 100 kHz, but it can be used up to 200 kHz with reduced performance.

  • Use a voltage clamp or a zener diode to protect against overvoltage, and a current sense resistor or a fuse to protect against overcurrent.

  • The thermal resistance of the IRG4PC50WPBF is 1.5°C/W (junction-to-case) and 30°C/W (junction-to-ambient) with a heat sink.

  • Yes, the IRG4PC50WPBF is qualified to automotive and industrial standards, making it suitable for high-reliability applications.

  • Use a gate driver IC or a dedicated gate drive circuit to provide a high-current, low-impedance drive to the gate of the IRG4PC50WPBF.