Transistors
IRG4PC30FPBF
Description: Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3

Overview of IRG4PC30FPBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC30FPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-IRG4PC30FPBF-ND
DigiKey FAST SPEED IGBT Min Qty: 160 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 451
In Stock
  • 160 $1.8800
$1.8800 Buy Now
Rochester Electronics IRG4PC30 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 1122
  • 1 $1.9000
  • 25 $1.8600
  • 100 $1.7900
  • 500 $1.7100
  • 1,000 $1.6100
$1.6100 / $1.9000 Buy Now
ComSIT USA INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant Stock EU - 175
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

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Part Data Attributes for IRG4PC30FPBF by International Rectifier

IRG4PC30FPBF
International Rectifier
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-247AC
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
31 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
270 ns
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
640 ns
Turn-on Time-Nom (ton)
36 ns
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  1. IRG4PC30FPBF
    International Rectifier
    Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRG4PC30FPBF

This table gives cross-reference parts and alternative options found for IRG4PC30FPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30FPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG4PC30F Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PC30FPBF vs IRG4PC30F
IRG4PC30F Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PC30FPBF vs IRG4PC30F
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG IRG4PC30FPBF vs IRG4PC30FPBF
Part Number Description Manufacturer Compare
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, 450-TUBE onsemi IRG4PC30FPBF vs HGTG12N60C3D
IRG4BC20FPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30FPBF vs IRG4BC20FPBF
IRG4PC40FPBF Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4PC30FPBF vs IRG4PC40FPBF
IRG4BC20SDPBF Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4PC30FPBF vs IRG4BC20SDPBF
SKW25N120 Insulated Gate Bipolar Transistor, 46A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IRG4PC30FPBF vs SKW25N120
SGB10N60 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens IRG4PC30FPBF vs SGB10N60
IRGP20B120U-EPBF Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN International Rectifier IRG4PC30FPBF vs IRGP20B120U-EPBF
IRG4BC10KDPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4PC30FPBF vs IRG4BC10KDPBF
IRGPS40B120UPBF Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier IRG4PC30FPBF vs IRGPS40B120UPBF
HGT1S12N60B3S 27A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation IRG4PC30FPBF vs HGT1S12N60B3S

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