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Transistors / IGBTs / IRG4IBC30WPBF
Datasheets
IRG4IBC30WPBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3

Part Details for IRG4IBC30WPBF by Infineon Technologies AG

Results Overview of IRG4IBC30WPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

IRG4IBC30WPBF Information

IRG4IBC30WPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRG4IBC30WPBF

Part # Distributor Description Stock Price Buy
DISTI # IRG4IBC30WPBF
TME Transistor: IGBT, 600V, 17A, 45W, TO220AB Min Qty: 1 0
  • 1 $2.4800
  • 3 $2.3400
  • 10 $2.0100
  • 50 $1.8900
$1.8900 / $2.4800 RFQ
DISTI # SP001533652
EBV Elektronik Trans IGBT Chip NCH 600V 17A 3Pin3Tab TO220 FullPak (Alt: SP001533652) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 450
RFQ

Part Details for IRG4IBC30WPBF

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IRG4IBC30WPBF Part Data Attributes

Parametric Data
IRG4IBC30WPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRG4IBC30WPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 17 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 41 ns

Alternate Parts for IRG4IBC30WPBF

This table gives cross-reference parts and alternative options found for IRG4IBC30WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4IBC30WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4IBC30W International Rectifier Check for Price Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 IRG4IBC30WPBF vs IRG4IBC30W
IRG4IBC30WPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 IRG4IBC30WPBF vs IRG4IBC30WPBF
IRG4IBC30W Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 IRG4IBC30WPBF vs IRG4IBC30W

IRG4IBC30WPBF Related Parts

IRG4IBC30WPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the IRG4IBC30WPBF can withstand is 175°C.

  • To ensure reliability, it is recommended to follow the thermal design guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.

  • The recommended gate resistance for the IRG4IBC30WPBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the IRG4IBC30WPBF is suitable for high-frequency applications up to 100 kHz, but the user should ensure that the device is properly cooled and that the switching losses are minimized.

  • To protect the IRG4IBC30WPBF from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as diodes or varistors in the circuit design.