Datasheets
IRG4IBC20UD by:

Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3

Part Details for IRG4IBC20UD by Infineon Technologies AG

Overview of IRG4IBC20UD by Infineon Technologies AG

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Part Details for IRG4IBC20UD

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IRG4IBC20UD Part Data Attributes

IRG4IBC20UD Infineon Technologies AG
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IRG4IBC20UD Infineon Technologies AG Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, FULL PACK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA FAST SOFT RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 11.4 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for IRG4IBC20UD

This table gives cross-reference parts and alternative options found for IRG4IBC20UD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4IBC20UD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4IBC20UDPBF Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 Infineon Technologies AG IRG4IBC20UD vs IRG4IBC20UDPBF
IKA08N65H5 Insulated Gate Bipolar Transistor Infineon Technologies AG IRG4IBC20UD vs IKA08N65H5
IKA08N65H5XKSA1 Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel, Infineon Technologies AG IRG4IBC20UD vs IKA08N65H5XKSA1
Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4IBC20UD vs GT15H101
IRGPC50S Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IRG4IBC20UD vs IRGPC50S
SGH20N60RUFD Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor IRG4IBC20UD vs SGH20N60RUFD
IHW20T120 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IRG4IBC20UD vs IHW20T120
HGT1S3N60B3DS Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IRG4IBC20UD vs HGT1S3N60B3DS
IXSH35N100A Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4IBC20UD vs IXSH35N100A
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4IBC20UD vs IRG4PC30KD
IKA06N60TXKSA1 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4IBC20UD vs IKA06N60TXKSA1
SGP20N60HSXKSA1 Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4IBC20UD vs SGP20N60HSXKSA1
IXGP20N120 Insulated Gate Bipolar Transistor, Littelfuse Inc IRG4IBC20UD vs IXGP20N120

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