Datasheets
IRG4BC30W-SPBF by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRG4BC30W-SPBF by International Rectifier

Overview of IRG4BC30W-SPBF by International Rectifier

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Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

Price & Stock for IRG4BC30W-SPBF

Part # Distributor Description Stock Price Buy
Quest Components 23A, 600V, N-CHANNEL IGBT 98
  • 1 $2.0813
  • 14 $1.6650
  • 46 $1.2488
$1.2488 / $2.0813 Buy Now

Part Details for IRG4BC30W-SPBF

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IRG4BC30W-SPBF Part Data Attributes:

IRG4BC30W-SPBF International Rectifier
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IRG4BC30W-SPBF International Rectifier Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 41 ns

Alternate Parts for IRG4BC30W-SPBF

This table gives cross-reference parts and alternative options found for IRG4BC30W-SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30W-SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC30W-STRR Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-SPBF vs IRG4BC30W-STRR
IRG4BC30W-STRL Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-SPBF vs IRG4BC30W-STRL
IRG4BC30W-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30W-SPBF vs IRG4BC30W-SPBF
IRG4BC30W-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30W-SPBF vs IRG4BC30W-S
Part Number Description Manufacturer Compare
IRG4BC30W-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30W-SPBF vs IRG4BC30W-S
IRG4BC30W-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30W-SPBF vs IRG4BC30W-SPBF
IRG4BC30W-STRL Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-SPBF vs IRG4BC30W-STRL
IRG4BC30W-STRR Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-SPBF vs IRG4BC30W-STRR

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