Datasheets
IRG4BC10SDPBF by: International Rectifier

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRG4BC10SDPBF by International Rectifier

Overview of IRG4BC10SDPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRG4BC10SDPBF

Part # Distributor Description Stock Price Buy
ComSIT USA STANDARD SPEED COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant Stock EU - 300
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRG4BC10SDPBF

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IRG4BC10SDPBF Part Data Attributes

IRG4BC10SDPBF International Rectifier
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IRG4BC10SDPBF International Rectifier Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 14 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 1080 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1780 ns
Turn-on Time-Nom (ton) 106 ns

Alternate Parts for IRG4BC10SDPBF

This table gives cross-reference parts and alternative options found for IRG4BC10SDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC10SDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4BC10SDPBF vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC10SDPBF vs IRGBC30FD2
HGT1S3N60B3DS Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IRG4BC10SDPBF vs HGT1S3N60B3DS
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC10SDPBF vs IRG4PC30KD
IHW20T120 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IRG4BC10SDPBF vs IHW20T120
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC10SDPBF vs IRG4PC50U
IXSH35N100A Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC10SDPBF vs IXSH35N100A
HGTP1N120BN Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4BC10SDPBF vs HGTP1N120BN
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IRG4BC10SDPBF vs HGTG40N60B3_NL
IXDH30N120 Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IRG4BC10SDPBF vs IXDH30N120

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