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Transistors / Power Field-Effect Transistors / IRFZ44S
Datasheets
IRFZ44S by:
Vishay Siliconix
International Rectifier
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3

Part Details for IRFZ44S by Vishay Siliconix

Results Overview of IRFZ44S by Vishay Siliconix

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IRFZ44S Information

IRFZ44S by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFZ44S

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IRFZ44S Part Data Attributes

Parametric Data
IRFZ44S Vishay Siliconix
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IRFZ44S Vishay Siliconix Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
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Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ44S

This table gives cross-reference parts and alternative options found for IRFZ44S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFZ44S Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRFZ44S vs IRFZ44S
Part Number Manufacturer Composite Price Description Compare
IRFZ44SPBF International Rectifier Check for Price Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRFZ44S vs IRFZ44SPBF
IRFZ44STRL International Rectifier Check for Price Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRFZ44S vs IRFZ44STRL
SIHFZ44S-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, IRFZ44S vs SIHFZ44S-GE3
IRFZ44STRLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 IRFZ44S vs IRFZ44STRLPBF
IRFZ44SPBF Vishay Intertechnologies $1.2691 Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IRFZ44S vs IRFZ44SPBF
SIHFZ44STR Vishay Siliconix Check for Price TRANSISTOR 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power IRFZ44S vs SIHFZ44STR

IRFZ44S Related Parts

IRFZ44S Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFZ44S is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum junction temperature of 150°C and ensure that the voltage and current ratings are not exceeded.

  • The thermal resistance of the IRFZ44S can be calculated using the thermal resistance values provided in the datasheet (RθJC and RθJA) and the specific application's thermal environment. A thermal simulation or modeling tool can be used to estimate the thermal resistance, or the datasheet's thermal resistance values can be used as a rough estimate.

  • The recommended gate drive voltage for the IRFZ44S is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching speed and reduce losses, but may also increase gate oxide stress and reduce device reliability.

  • Yes, the IRFZ44S can be used in high-frequency switching applications, but the device's switching losses and thermal performance must be carefully considered. The datasheet provides information on the device's switching characteristics and thermal performance, which can be used to estimate the device's suitability for high-frequency applications.

  • To ensure the IRFZ44S is properly biased and configured for linear operation, the gate-source voltage (Vgs) should be set to a value that provides the desired level of conduction, and the drain-source voltage (Vds) should be limited to prevent the device from entering saturation. The datasheet provides information on the device's linear operation characteristics and recommended biasing conditions.