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Transistors Power Field-Effect Transistors IRFZ44EPBF

Transistors
IRFZ44EPBF
Description: Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRFZ44EPBF by International Rectifier

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 1 cross )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 6 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IRFZ44EPBF by International Rectifier
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Part Data Attributes for IRFZ44EPBF by International Rectifier
Parametric Data

IRFZ44EPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas)
220 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
48 A
Drain-source On Resistance-Max
0.023 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
250
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
192 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFZ44EPBF
    International Rectifier
    Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRFZ44EPBF

This table gives cross-reference parts and alternative options found for IRFZ44EPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44EPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFZ44EPBF vs IRFZ44EPBF
Part Number Description Manufacturer Compare
2SK2953 TRANSISTOR 15 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRFZ44EPBF vs 2SK2953
FQPF6N90 Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation IRFZ44EPBF vs FQPF6N90
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFZ44EPBF vs IRFZ44EPBF
FQPF8N90C N-Channel QFET® MOSFET 900V, 6.3A, 1.9Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL Fairchild Semiconductor Corporation IRFZ44EPBF vs FQPF8N90C
FQAF6N90 Power Field-Effect Transistor, 4.5A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation IRFZ44EPBF vs FQAF6N90
FQPF8N90C Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F, 1000-TUBE onsemi IRFZ44EPBF vs FQPF8N90C

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