Transistors
IRFZ34STRL
Description: Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Overview of IRFZ34STRL by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFZ34STRL by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 2375
  • 1 $1.9325
  • 622 $0.8890
  • 1,126 $0.8117
$0.8117 / $1.9325 Buy Now

CAD Models for IRFZ34STRL by International Rectifier
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Part Data Attributes for IRFZ34STRL by International Rectifier

IRFZ34STRL
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE
Avalanche Energy Rating (Eas)
200 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
88 W
Power Dissipation-Max (Abs)
88 W
Pulsed Drain Current-Max (IDM)
120 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFZ34STRL
    International Rectifier
    Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
    VS

Alternate Parts for IRFZ34STRL

This table gives cross-reference parts and alternative options found for IRFZ34STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ34SPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRFZ34STRL vs IRFZ34SPBF
IRFZ34STRLPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRFZ34STRL vs IRFZ34STRLPBF
IRFZ34S Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier IRFZ34STRL vs IRFZ34S
IRFZ34STRR Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRFZ34STRL vs IRFZ34STRR
IRFZ34STRR Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier IRFZ34STRL vs IRFZ34STRR
Part Number Description Manufacturer Compare
IRFZ34STRR Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRFZ34STRL vs IRFZ34STRR
SIHFZ34STL TRANSISTOR 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRFZ34STRL vs SIHFZ34STL
IRFZ34STRLPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRFZ34STRL vs IRFZ34STRLPBF
IRFZ34S Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier IRFZ34STRL vs IRFZ34S
IRFZ34STRR Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier IRFZ34STRL vs IRFZ34STRR

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