-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRFZ34NSTRLPBF by Infineon Technologies AG
Overview of IRFZ34NSTRLPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFZ34NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC9165
|
Newark | Mosfet, N-Ch, 55V, 29A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.04Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRFZ34NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1786 |
|
$1.3800 / $1.6500 | Buy Now |
|
DISTI #
86AK5342
|
Newark | Mosfet, N-Ch, 55V, 29A, To-263 Rohs Compliant: Yes |Infineon IRFZ34NSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$1.0000 | Buy Now |
|
DISTI #
IRFZ34NSTRLPBFCT-ND
|
DigiKey | MOSFET N-CH 55V 29A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4338 In Stock |
|
$0.5978 / $1.5200 | Buy Now |
|
DISTI #
IRFZ34NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.5312 / $0.6450 | Buy Now |
|
DISTI #
IRFZ34NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.5312 / $0.6450 | Buy Now |
|
DISTI #
942-IRFZ34NSTRLPBF
|
Mouser Electronics | MOSFET MOSFT 55V 29A 40mOhm 22.7nC RoHS: Compliant | 7153 |
|
$0.5970 / $1.4500 | Buy Now |
|
|
Future Electronics | Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 28800Reel |
|
$0.5400 / $0.5900 | Buy Now |
|
|
Future Electronics | Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 3200Reel |
|
$0.5400 / $0.5900 | Buy Now |
|
DISTI #
IRFZ34NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.5312 / $0.6450 | Buy Now |
|
DISTI #
IRFZ34NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.5312 / $0.6450 | Buy Now |
Part Details for IRFZ34NSTRLPBF
IRFZ34NSTRLPBF CAD Models
IRFZ34NSTRLPBF Part Data Attributes
|
|
IRFZ34NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFZ34NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ34NSTRLPBF
This table gives cross-reference parts and alternative options found for IRFZ34NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFZ34NSTRLPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSTRLPBF vs IRFZ34NSTRLPBF |
| IRFZ34NSTRR | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSTRLPBF vs IRFZ34NSTRR |
| IRFZ34NSTRRPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSTRLPBF vs IRFZ34NSTRRPBF |
| IRFZ34NS | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSTRLPBF vs IRFZ34NS |
| IRFZ34NSPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSTRLPBF vs IRFZ34NSPBF |
| IRFZ34NSTRL | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSTRLPBF vs IRFZ34NSTRL |
| IRFZ34NS | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSTRLPBF vs IRFZ34NS |
| IRFZ34NSPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSTRLPBF vs IRFZ34NSPBF |