Part Details for IRFZ10 by International Rectifier
Results Overview of IRFZ10 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFZ10 Information
IRFZ10 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 42 |
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$1.2188 / $1.8750 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,7.2A I(D),TO-220AB | 498 |
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$0.6250 / $1.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,7.2A I(D),TO-220AB | 336 |
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$1.9370 / $4.4700 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,7.2A I(D),TO-220AB | 33 |
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$1.2500 / $2.5000 | Buy Now |
Part Details for IRFZ10
IRFZ10 CAD Models
IRFZ10 Part Data Attributes
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IRFZ10
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ10
International Rectifier
Power Field-Effect Transistor, 7.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 7.2 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 29 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |