Datasheets
IRFY9130M by:

11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

Part Details for IRFY9130M by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFY9130M by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for IRFY9130M

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IRFY9130M Part Data Attributes:

IRFY9130M TT Electronics Power and Hybrid / Semelab Limited
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IRFY9130M TT Electronics Power and Hybrid / Semelab Limited 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Part Package Code TO-257AB
Package Description FLANGE MOUNT, S-MSFM-P3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 11.2 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AB
JESD-30 Code S-MSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFY9130M

This table gives cross-reference parts and alternative options found for IRFY9130M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY9130M-QR-BR1 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130M vs IRFY9130M-QR-BR1
IRFY9130M-QR-BR1 Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY9130M vs IRFY9130M-QR-BR1
IRFY9130M-QR-B 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130M vs IRFY9130M-QR-B
IRFY9130M Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN International Rectifier IRFY9130M vs IRFY9130M
Part Number Description Manufacturer Compare
IRFY9130ME Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY9130M vs IRFY9130ME
IRFY9130C-JQR-BR1 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130M vs IRFY9130C-JQR-BR1
IRFY9130CM Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN Infineon Technologies AG IRFY9130M vs IRFY9130CM
IRFY9130ECPBF Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130M vs IRFY9130ECPBF
IRFY9130 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130M vs IRFY9130
IRFY9130EAPBF Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130M vs IRFY9130EAPBF
IRFY9130CSCS Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130M vs IRFY9130CSCS
IRFY9130MEBPBF Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130M vs IRFY9130MEBPBF
IRFY9130-QR-EB Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY9130M vs IRFY9130-QR-EB
IRFY9130ED Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY9130M vs IRFY9130ED

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