Part Details for IRFY9130 by International Rectifier
Overview of IRFY9130 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFY9130
IRFY9130 CAD Models
IRFY9130 Part Data Attributes
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IRFY9130
International Rectifier
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Datasheet
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IRFY9130
International Rectifier
Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-257AA | |
| Package Description | HERMETIC SEALED, TO-257AA, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11.2 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | S-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 45 W | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 280 ns | |
| Turn-on Time-Max (ton) | 200 ns |
Alternate Parts for IRFY9130
This table gives cross-reference parts and alternative options found for IRFY9130. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY9130 | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130 vs IRFY9130 |
| IRFY9130C | Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | International Rectifier | IRFY9130 vs IRFY9130C |
| IRFY9130 | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Resistors | IRFY9130 vs IRFY9130 |
| IRFY9130R1 | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130 vs IRFY9130R1 |
| IRFY9130-QR-B | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130 vs IRFY9130-QR-B |
| IRFY9130C | 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130 vs IRFY9130C |
| IRFY9130R1 | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Resistors | IRFY9130 vs IRFY9130R1 |
| IRFY9130-JQR-B | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130 vs IRFY9130-JQR-B |
| IRFY9130C | Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | Infineon Technologies AG | IRFY9130 vs IRFY9130C |
| IRFY9130-JQR-BR1 | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Resistors | IRFY9130 vs IRFY9130-JQR-BR1 |