Transistors
IRFY430C
Description: 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN

Overview of IRFY430C by TT Electronics Power and Hybrid / Semelab Limited

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Part Data Attributes for IRFY430C by TT Electronics Power and Hybrid / Semelab Limited

IRFY430C
TT Electronics Power and Hybrid / Semelab Limited
-
-
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
SEMELAB LTD
Part Package Code
TO-257AB
Package Description
FLANGE MOUNT, S-MSFM-P3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-257AB
JESD-30 Code
S-MSFM-P3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. IRFY430C
    TT Electronics Power and Hybrid / Semelab Limited
    4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN
    VS

Alternate Parts for IRFY430C

This table gives cross-reference parts and alternative options found for IRFY430C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY430C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFY430-JQR-BR1 3.7A, 500V, 1.84ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY430C vs IRFY430-JQR-BR1
IRFY430R1 Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430C vs IRFY430R1
IRFY430-JQR-B 3.7A, 500V, 1.84ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY430C vs IRFY430-JQR-B
IRFY430C Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN TT Electronics Resistors IRFY430C vs IRFY430C
IRFY430-JQR-B Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430C vs IRFY430-JQR-B
Part Number Description Manufacturer Compare
IRFY430 Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430C vs IRFY430
IRFY430R1 Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430C vs IRFY430R1
IRFY430-JQR-B Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430C vs IRFY430-JQR-B
IRFY430-JQR-B 3.7A, 500V, 1.84ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY430C vs IRFY430-JQR-B
IRFY430C Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN TT Electronics Resistors IRFY430C vs IRFY430C

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