Datasheets
IRFV360D by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA

Part Details for IRFV360D by International Rectifier

Results Overview of IRFV360D by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFV360D Information

IRFV360D by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFV360D

IRFV360D CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRFV360D Part Data Attributes

IRFV360D International Rectifier
Buy Now Datasheet
Compare Parts:
IRFV360D International Rectifier Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
Select a part to compare:
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 980 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-258AA
JESD-30 Code R-XSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 219 ns
Turn-on Time-Max (ton) 173 ns

Alternate Parts for IRFV360D

This table gives cross-reference parts and alternative options found for IRFV360D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFV360D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFV360DPBF International Rectifier Check for Price Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA IRFV360D vs IRFV360DPBF
Part Number Manufacturer Composite Price Description Compare
IRFV360D Infineon Technologies AG Check for Price Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, IRFV360D vs IRFV360D