There are no models available for this part yet.
Overview of IRFU9220PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 8 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
CAD Models for IRFU9220PBF by International Rectifier
Part Data Attributes for IRFU9220PBF by International Rectifier
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code
|
TO-251AA
|
Package Description
|
LEAD FREE, IPAK-3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
310 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
200 V
|
Drain Current-Max (ID)
|
3.6 A
|
Drain-source On Resistance-Max
|
1.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-251AA
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
42 W
|
Pulsed Drain Current-Max (IDM)
|
14 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
MATTE TIN OVER NICKEL
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFU9220PBF
This table gives cross-reference parts and alternative options found for IRFU9220PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU9220PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFU9220PBF | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Vishay Intertechnologies | IRFU9220PBF vs IRFU9220PBF |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | IRFU9220PBF vs IRFU9220 |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Vishay Siliconix | IRFU9220PBF vs IRFU9220 |
SIHFU9220-GE3 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Vishay Intertechnologies | IRFU9220PBF vs SIHFU9220-GE3 |
IRFU9220PBF | Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) IPAK | Vishay Siliconix | IRFU9220PBF vs IRFU9220PBF |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU9220PBF vs IRFU9220 |
IRFU9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU9220PBF vs IRFU9220 |
SIHFU9220-GE3 | POWER MOSFET - Tape and Reel | Vishay Siliconix | IRFU9220PBF vs SIHFU9220-GE3 |
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