Datasheets
IRFU5410PBF by:

Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

Part Details for IRFU5410PBF by International Rectifier

Overview of IRFU5410PBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFU5410PBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRFU5410PBF-ND
DigiKey IRFU5410 - 20V-250V P-CHANNEL PO Min Qty: 532 Container: Bulk MARKETPLACE PRODUCT 281224
In Stock
  • 532 $0.5600
$0.5600 Buy Now
Bristol Electronics   199
RFQ
Quest Components   159
  • 1 $1.9200
  • 14 $1.1520
  • 53 $0.9600
$0.9600 / $1.9200 Buy Now
Rochester Electronics IRFU5410 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 282394
  • 1 $0.5704
  • 25 $0.5590
  • 100 $0.5362
  • 500 $0.5134
  • 1,000 $0.4848
$0.4848 / $0.5704 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant Europe - 150
RFQ

Part Details for IRFU5410PBF

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IRFU5410PBF Part Data Attributes

IRFU5410PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFU5410PBF International Rectifier Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-251AA
Package Description LEAD FREE, PLASTIC, IPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 194 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.205 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 66 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU5410PBF

This table gives cross-reference parts and alternative options found for IRFU5410PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU5410PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU5410PBF Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG IRFU5410PBF vs IRFU5410PBF
Part Number Description Manufacturer Compare
IRFU5410PBF Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG IRFU5410PBF vs IRFU5410PBF

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