Part Details for IRFU5410PBF by Infineon Technologies AG
Overview of IRFU5410PBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFU5410PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH8940
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Newark | Mosfet, P-Ch, 100V, 13A, 150Deg C, 66W, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:13A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFU5410PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 729 |
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$0.5080 / $1.3400 | Buy Now |
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DISTI #
IRFU5410PBF-ND
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DigiKey | MOSFET P-CH 100V 13A IPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube |
4368 In Stock |
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$0.4898 / $1.3000 | Buy Now |
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DISTI #
IRFU5410PBF
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Avnet Americas | Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU5410PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 75 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.4563 / $0.5214 | Buy Now |
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DISTI #
39AH8940
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Avnet Americas | Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK - Bulk (Alt: 39AH8940) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 108 Partner Stock |
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$0.5950 / $1.3400 | Buy Now |
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DISTI #
942-IRFU5410PBF
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Mouser Electronics | MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC RoHS: Compliant | 13915 |
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$0.4880 / $1.2900 | Buy Now |
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Future Electronics | Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 10 Weeks Container: Tube | 0Tube |
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$0.4800 / $0.5650 | Buy Now |
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Future Electronics | Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 10 Weeks Container: Tube | 0Tube |
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$0.4800 / $0.5650 | Buy Now |
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DISTI #
80320728
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Verical | Trans MOSFET P-CH Si 100V 13A 3-Pin(3+Tab) IPAK Tube Min Qty: 3000 Package Multiple: 3000 Date Code: 2201 | Americas - 69000 |
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$0.5498 | Buy Now |
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DISTI #
60577393
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Verical | Trans MOSFET P-CH Si 100V 13A 3-Pin(3+Tab) IPAK Tube Min Qty: 32 Package Multiple: 1 Date Code: 2045 | Americas - 3535 |
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$0.6013 / $0.9863 | Buy Now |
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DISTI #
80935533
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Verical | Trans MOSFET P-CH Si 100V 13A 3-Pin(3+Tab) IPAK Tube Min Qty: 13 Package Multiple: 1 Date Code: 2101 | Americas - 1521 |
|
$0.7732 | Buy Now |
Part Details for IRFU5410PBF
IRFU5410PBF CAD Models
IRFU5410PBF Part Data Attributes:
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IRFU5410PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFU5410PBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 194 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.205 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU5410PBF
This table gives cross-reference parts and alternative options found for IRFU5410PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU5410PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFU5410 | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 | International Rectifier | IRFU5410PBF vs IRFU5410 |