Part Details for IRFU4105PBF by International Rectifier
Results Overview of IRFU4105PBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFU4105PBF Information
IRFU4105PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFU4105PBF
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Si... more RoHS: Compliant ECCN: EAR99 |
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Part Details for IRFU4105PBF
IRFU4105PBF CAD Models
IRFU4105PBF Part Data Attributes
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IRFU4105PBF
International Rectifier
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Datasheet
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IRFU4105PBF
International Rectifier
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-251AA | |
| Package Description | LEAD FREE, PLASTIC, IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU4105PBF
This table gives cross-reference parts and alternative options found for IRFU4105PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU4105PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR4105TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFU4105PBF vs IRFR4105TRLPBF |
| MTD20N06HD | onsemi | Check for Price | 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | IRFU4105PBF vs MTD20N06HD |
| NTD20N06L-1G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK INSERTION MOUNT, 75-TUBE | IRFU4105PBF vs NTD20N06L-1G |
| IRFR4105TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFU4105PBF vs IRFR4105TRPBF |
| MTD20N06HDT4 | onsemi | Check for Price | Power MOSFET 20 Amps, 60 Volts, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | IRFU4105PBF vs MTD20N06HDT4 |
| FDD5680 | onsemi | $0.7314 | N-Channel PowerTrench® MOSFET, 38A, 21mΩ, DPAK-3 / TO-252-3, 2500-REEL | IRFU4105PBF vs FDD5680 |
| AUIRFR4105TRR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | IRFU4105PBF vs AUIRFR4105TRR |
| NTD5867NL-1G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE | IRFU4105PBF vs NTD5867NL-1G |
| NTD20N06LT4G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | IRFU4105PBF vs NTD20N06LT4G |
| IRFR4105TRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFU4105PBF vs IRFR4105TRRPBF |