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Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2664
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Newark | Mosfet, N, 200V, 5A, I-Pak, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.6Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:43W, rohs Compliant: Yes |Infineon IRFU220NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 4569 |
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$0.4040 / $1.0400 | Buy Now |
DISTI #
IRFU220NPBF-ND
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DigiKey | MOSFET N-CH 200V 5A IPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1253 In Stock |
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$0.3880 / $1.5600 | Buy Now |
DISTI #
38K2664
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Avnet Americas | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK - Bulk (Alt: 38K2664) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 1570 Partner Stock |
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$0.4310 / $1.0400 | Buy Now |
DISTI #
IRFU220NPBF
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Avnet Americas | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU220NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$0.3080 / $0.3234 | Buy Now |
DISTI #
942-IRFU220NPBF
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Mouser Electronics | MOSFETs MOSFT 200V 5A 600mOhm 15nC RoHS: Compliant | 1590 |
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$0.3880 / $0.8200 | Buy Now |
DISTI #
V99:2348_13892549
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Arrow Electronics | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2118 | Americas - 2129 |
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$0.2374 / $0.3328 | Buy Now |
DISTI #
E02:0323_00175652
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Arrow Electronics | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2148 | Europe - 1370 |
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$0.3082 / $0.4564 | Buy Now |
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Future Electronics | Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 75 Package Multiple: 75 Lead time: 10 Weeks Container: Tube | 6000Tube |
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$0.3700 / $0.4350 | Buy Now |
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Future Electronics | Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Tube | 777Tube |
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$0.3700 / $0.4500 | Buy Now |
DISTI #
77265126
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Verical | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube Min Qty: 93 Package Multiple: 1 Date Code: 2147 | Americas - 2960 |
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$0.3325 / $0.3363 | Buy Now |
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IRFU220NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFU220NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 46 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFU220NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU220NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFU220N | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | Infineon Technologies AG | IRFU220NPBF vs IRFU220N |
IRFU220NPBF | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 | International Rectifier | IRFU220NPBF vs IRFU220NPBF |
IRFU220N | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | International Rectifier | IRFU220NPBF vs IRFU220N |