There are no models available for this part yet.
Overview of IRFS7437PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRFS7437PBF by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| ComSIT USA | StrongIR FET Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant |
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|
RFQ |
CAD Models for IRFS7437PBF by International Rectifier
Part Data Attributes for IRFS7437PBF by International Rectifier
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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802 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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40 V
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Drain Current-Max (ID)
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195 A
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Drain-source On Resistance-Max
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0.0018 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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230 W
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Pulsed Drain Current-Max (IDM)
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1000 A
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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