Part Details for IRFS630A by Fairchild Semiconductor Corporation
Overview of IRFS630A by Fairchild Semiconductor Corporation
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFS630A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFS630A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 683 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
56970 In Stock |
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$0.4400 | Buy Now |
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Bristol Electronics | Min Qty: 5 | 100 |
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$0.4219 / $1.1250 | Buy Now |
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Quest Components | 6.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 197 |
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$0.3959 / $0.8484 | Buy Now |
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Quest Components | 6.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 80 |
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$0.4500 / $1.5000 | Buy Now |
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Rochester Electronics | 6.5A, 200V, 0.4ohm, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 56970 |
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$0.3771 / $0.4436 | Buy Now |
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Chip1Cloud | Advanced Power MOSFET | 41200 |
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RFQ |
Part Details for IRFS630A
IRFS630A CAD Models
IRFS630A Part Data Attributes
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IRFS630A
Fairchild Semiconductor Corporation
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Datasheet
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IRFS630A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220F | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 141 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |