Datasheets
IRFS624B by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

Part Details for IRFS624B by Fairchild Semiconductor Corporation

Overview of IRFS624B by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for IRFS624B

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IRFS624B Part Data Attributes

IRFS624B Fairchild Semiconductor Corporation
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IRFS624B Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 75 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 16.4 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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