We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / Power Field-Effect Transistors / IRFS41N15DTRLP
Datasheets
IRFS41N15DTRLP by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

Part Details for IRFS41N15DTRLP by International Rectifier

Results Overview of IRFS41N15DTRLP by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Motor control systems

IRFS41N15DTRLP Information

IRFS41N15DTRLP by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFS41N15DTRLP

Part # Distributor Description Stock Price Buy
Bristol Electronics   2354
RFQ
Quest Components   1883
  • 1 $3.5280
  • 461 $1.9404
  • 1,032 $1.7640
$1.7640 / $3.5280 Buy Now

Part Details for IRFS41N15DTRLP

IRFS41N15DTRLP CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRFS41N15DTRLP Part Data Attributes

Parametric Data
IRFS41N15DTRLP International Rectifier
Buy Now Datasheet
Compare Parts:
IRFS41N15DTRLP International Rectifier Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description LEAD FREE, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 470 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 41 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 164 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFS41N15DTRLP

This table gives cross-reference parts and alternative options found for IRFS41N15DTRLP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS41N15DTRLP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFS41N15D International Rectifier Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15D
IRFS41N15DPBF International Rectifier Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15DPBF
IRFS41N15DPBF Infineon Technologies AG $1.4566 Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15DPBF
IRFS41N15DTRRP International Rectifier Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15DTRRP
IRFS41N15D Infineon Technologies AG Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15D
IRFS41N15DTRLP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15DTRLP
IRFS41N15DTRR International Rectifier Check for Price Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRFS41N15DTRLP vs IRFS41N15DTRR

IRFS41N15DTRLP Related Parts

IRFS41N15DTRLP Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the IRFS41N15DTRLP is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To calculate the power dissipation of the IRFS41N15DTRLP, you need to know the drain-source on-state resistance (RDS(on)), the drain current (ID), and the voltage across the device (VDS). The power dissipation can be calculated using the formula: Pd = RDS(on) * ID^2 + VDS * ID. You can find the RDS(on) value in the datasheet.

  • The recommended gate drive voltage for the IRFS41N15DTRLP is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve the switching performance, but it may also increase the power consumption and electromagnetic interference (EMI).

  • Yes, the IRFS41N15DTRLP is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly cooled and that the switching frequency is within the recommended range to prevent overheating and reduce electromagnetic interference (EMI).

  • To protect the IRFS41N15DTRLP from overvoltage and overcurrent, you can use a voltage clamp or a surge protector to limit the voltage across the device. You can also use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.