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Transistors / Power Field-Effect Transistors / IRFS4115PBF
Datasheets
IRFS4115PBF by:
Infineon Technologies AG
Hongxing Electrical Ltd
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRFS4115PBF by Infineon Technologies AG

Results Overview of IRFS4115PBF by Infineon Technologies AG

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IRFS4115PBF Information

IRFS4115PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFS4115PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFS4115PBF-ND
DigiKey MOSFET N-CH 150V 195A D2PAK Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 70019190
RS IRFS4115PBF N-channel MOSFET Transistor, 195 A, 150 V, 3-Pin D2PAK | Infineon IRFS4115PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $4.0500
  • 10 $3.8500
  • 20 $3.6500
  • 40 $3.4400
$3.4400 / $4.0500 RFQ
DISTI # SP001565010
EBV Elektronik Trans MOSFET NCH 150V 195A 3Pin2Tab D2PAK Tube (Alt: SP001565010) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 150V 195A D2-PAK 4330
  • 40 $1.3347
  • 85 $1.2486
  • 125 $1.2056
  • 180 $1.1195
  • 235 $1.0764
  • 295 $1.0334
$1.0334 / $1.3347 Buy Now

Part Details for IRFS4115PBF

IRFS4115PBF CAD Models

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IRFS4115PBF Part Data Attributes

Parametric Data
IRFS4115PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFS4115PBF Infineon Technologies AG Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 830 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 99 A
Drain-source On Resistance-Max 0.0121 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 396 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFS4115PBF

This table gives cross-reference parts and alternative options found for IRFS4115PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4115PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFS4115PBF International Rectifier Check for Price Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRFS4115PBF vs IRFS4115PBF
IRFS4115TRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRFS4115PBF vs IRFS4115TRLPBF
IRFS4115TRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRFS4115PBF vs IRFS4115TRRPBF

IRFS4115PBF Related Parts

IRFS4115PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFS4115PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.

  • The recommended gate drive voltage for the IRFS4115PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFS4115PBF can be used in a parallel configuration, but it's essential to ensure proper synchronization and gate drive circuitry to prevent shoot-through currents.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor, to prevent damage to the device.