Datasheets
IRFS4115-7PPBF by:

Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, LEAD FREE, PLASTIC, D2PAK-7/6

Part Details for IRFS4115-7PPBF by Infineon Technologies AG

Overview of IRFS4115-7PPBF by Infineon Technologies AG

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Price & Stock for IRFS4115-7PPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFS4115-7PPBF-ND
DigiKey MOSFET N-CH 150V 105A D2PAK Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
Ameya Holding Limited IRFS4115-7PPBF , N沟道 MOSFET 晶体管, 105 A, Vds=150 V, 7针 D2PAK封装 474
RFQ

Part Details for IRFS4115-7PPBF

IRFS4115-7PPBF CAD Models

IRFS4115-7PPBF Part Data Attributes

IRFS4115-7PPBF Infineon Technologies AG
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IRFS4115-7PPBF Infineon Technologies AG Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, LEAD FREE, PLASTIC, D2PAK-7/6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 105 A
Drain-source On Resistance-Max 0.0118 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 380 W
Pulsed Drain Current-Max (IDM) 420 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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