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Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, LEAD FREE, PLASTIC, D2PAK-7/6
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS4115-7PPBF-ND
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DigiKey | MOSFET N-CH 150V 105A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Ameya Holding Limited | IRFS4115-7PPBF , N沟道 MOSFET 晶体管, 105 A, Vds=150 V, 7针 D2PAK封装 | 474 |
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RFQ |
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IRFS4115-7PPBF
Infineon Technologies AG
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Datasheet
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IRFS4115-7PPBF
Infineon Technologies AG
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, LEAD FREE, PLASTIC, D2PAK-7/6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 105 A | |
Drain-source On Resistance-Max | 0.0118 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263CB | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 380 W | |
Pulsed Drain Current-Max (IDM) | 420 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |