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Transistors / Power Field-Effect Transistors / IRFS4010TRLPBF
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IRFS4010TRLPBF by:

Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRFS4010TRLPBF by Infineon Technologies AG

Overview of IRFS4010TRLPBF by Infineon Technologies AG

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Price & Stock for IRFS4010TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 13AC9154
Newark Mosfet, N-Ch, 100V, 180A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS4010TRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 141
  • 1 $3.8100
  • 10 $3.1900
  • 25 $2.9800
  • 50 $2.7900
  • 100 $2.5800
$2.5800 / $3.8100 Buy Now
DISTI # 86AK5328
Newark Mosfet, N-Ch, 100V, 180A, To-263Ab Rohs Compliant: Yes |Infineon IRFS4010TRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 800 $2.1300
  • 1,600 $1.9700
  • 3,200 $1.8500
  • 4,800 $1.8100
  • 8,000 $1.7800
$1.7800 / $2.1300 Buy Now
DISTI # IRFS4010TRLPBFCT-ND
DigiKey MOSFET N-CH 100V 180A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 29697
In Stock
  • 1 $3.6600
  • 10 $3.0700
  • 100 $2.4838
  • 800 $2.2078
  • 1,600 $1.8904
  • 2,400 $1.7800
  • 5,600 $1.7078
$1.7078 / $3.6600 Buy Now
DISTI # IRFS4010TRLPBF
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 800 $1.9354
  • 1,600 $1.8785
  • 3,200 $1.8216
  • 4,800 $1.7647
  • 6,400 $1.7078
  • 8,000 $1.6508
  • 80,000 $1.5939
$1.5939 / $1.9354 Buy Now
DISTI # IRFS4010TRLPBF
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF) RoHS: Compliant Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # IRFS4010TRLPBF
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $1.9354
  • 1,600 $1.8785
  • 3,200 $1.8216
  • 4,800 $1.7647
  • 6,400 $1.7078
  • 8,000 $1.6508
  • 80,000 $1.5939
$1.5939 / $1.9354 Buy Now
DISTI # 13AC9154
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9154) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 141 Partner Stock
  • 1 $3.8100
  • 10 $3.1900
  • 25 $3.0000
  • 50 $2.7900
  • 100 $2.5900
$2.5900 / $3.8100 Buy Now
DISTI # 942-IRFS4010TRLPBF
Mouser Electronics MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg RoHS: Compliant 2143
  • 1 $3.6600
  • 10 $3.0700
  • 25 $2.9800
  • 100 $2.4900
  • 500 $2.4800
  • 800 $1.8800
  • 2,400 $1.7800
$1.7800 / $3.6600 Buy Now
DISTI # 70019745
RS MOSFET, 100V, 180A, 4.7 MOHM, 143 NC QG, D2-PAK | Infineon IRFS4010TRLPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $3.6900
  • 10 $3.5100
  • 20 $3.3100
  • 40 $3.1300
$3.1300 / $3.6900 RFQ
Future Electronics Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 1600
Reel
  • 800 $1.8100
  • 1,600 $1.7800
  • 2,400 $1.7500
$1.7500 / $1.8100 Buy Now
Future Electronics Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel 8
Cut Tape/Mini-Reel
  • 1 $3.2300
  • 10 $2.9300
  • 40 $2.7500
  • 125 $2.6000
  • 400 $2.4500
$2.4500 / $3.2300 Buy Now
Future Electronics Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $1.8100
  • 1,600 $1.7800
  • 2,400 $1.7500
$1.7500 / $1.8100 Buy Now
DISTI # IRFS4010TRLPBF
TME Transistor: N-MOSFET, unipolar, 100V, 127A, 375W, D2PAK Min Qty: 1 0
  • 1 $4.1400
  • 5 $3.7200
  • 25 $3.2900
  • 100 $2.9600
  • 500 $2.7600
$2.7600 / $4.1400 RFQ
Ameya Holding Limited Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK 6400
RFQ
DISTI # TMOS2073
Rutronik N-CH 100V 180A 4,7mOhm D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel Stock DE - 8800
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 800 $2.0800
  • 1,600 $1.9600
  • 2,400 $1.8500
  • 3,200 $1.6600
  • 4,000 $1.6100
$1.6100 / $2.0800 Buy Now
DISTI # SP001550124
EBV Elektronik Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001550124) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 64800
Buy Now
New Advantage Corporation Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 800 3200
  • 800 $2.3000
  • 3,200 $2.1500
$2.1500 / $2.3000 Buy Now
Win Source Electronics Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK 41676
  • 24 $2.1200
  • 58 $1.7400
  • 90 $1.6850
  • 123 $1.6310
  • 159 $1.5770
  • 213 $1.4130
$1.4130 / $2.1200 Buy Now

Part Details for IRFS4010TRLPBF

IRFS4010TRLPBF CAD Models

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IRFS4010TRLPBF Part Data Attributes:

Parametric Data
IRFS4010TRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFS4010TRLPBF Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 318 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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